Parameters | |
---|---|
Lifecycle Status | LAST SHIPMENTS (Last Updated: 6 days ago) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Surface Mount | YES |
Number of Pins | 4 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2007 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Pin Count | 4 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Power Dissipation-Max | 1.33W Ta 60W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.14W |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 4.7m Ω @ 30A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 2241pF @ 12V |
Current - Continuous Drain (Id) @ 25°C | 13.3A Ta 89A Tc |
Gate Charge (Qg) (Max) @ Vgs | 27nC @ 4.5V |
Rise Time | 22.5ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 7.5 ns |
Turn-Off Delay Time | 27.2 ns |
Continuous Drain Current (ID) | 16.8A |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 89A |
Drain-source On Resistance-Max | 0.0068Ohm |
Drain to Source Breakdown Voltage | 25V |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |