banner_page

NTD4863N-35G

MOSFET N-CH 25V 9.2A IPAK


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NTD4863N-35G
  • Package: TO-251-3 Stub Leads, IPak
  • Datasheet: PDF
  • Stock: 955
  • Description: MOSFET N-CH 25V 9.2A IPAK (Kg)

Details

Tags

Parameters
Power Dissipation 1.27W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.3m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 990pF @ 12V
Current - Continuous Drain (Id) @ 25°C 9.2A Ta 49A Tc
Gate Charge (Qg) (Max) @ Vgs 13.5nC @ 4.5V
Rise Time 19.7ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.6 ns
Turn-Off Delay Time 20.2 ns
Continuous Drain Current (ID) 8.6A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 9.2A
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 98A
Avalanche Energy Rating (Eas) 60.5 mJ
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type Through Hole
Package / Case TO-251-3 Stub Leads, IPak
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 1.27W Ta 36.6W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good