Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | LIFETIME (Last Updated: 14 hours ago) |
Contact Plating | Tin |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Stub Leads, IPak |
Surface Mount | NO |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2010 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Pin Count | 3 |
Number of Elements | 1 |
Power Dissipation-Max | 1.4W Ta 52W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 52W |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 3.7m Ω @ 30A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 3052pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 13A Ta 79A Tc |
Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Continuous Drain Current (ID) | 79A |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 0.0055Ohm |
Drain to Source Breakdown Voltage | 30V |
Avalanche Energy Rating (Eas) | 68.4 mJ |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |