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NTD4904NT4G

MOSFET NFET IPAK 30V 79A 3.7 mOhm


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NTD4904NT4G
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 143
  • Description: MOSFET NFET IPAK 30V 79A 3.7 mOhm (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status LIFETIME (Last Updated: 3 days ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 1.4W Ta 52W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.6W
Case Connection DRAIN
Turn On Delay Time 15.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.7m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3052pF @ 15V
Current - Continuous Drain (Id) @ 25°C 13A Ta 79A Tc
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 28.7 ns
Continuous Drain Current (ID) 17.8A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 79A
Drain-source On Resistance-Max 0.0055Ohm
Drain to Source Breakdown Voltage 30V
Height 2.38mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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