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NTD4910NT4G

MOSFET N-CH 30V 37A DPAK


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NTD4910NT4G
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 498
  • Description: MOSFET N-CH 30V 37A DPAK (Kg)

Details

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Parameters
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 1.37W Ta 27.3W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 11.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1203pF @ 15V
Current - Continuous Drain (Id) @ 25°C 8.2A Ta 37A Tc
Gate Charge (Qg) (Max) @ Vgs 15.4nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 16.5 ns
Continuous Drain Current (ID) 37A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 8.2A
Drain-source On Resistance-Max 0.013Ohm
Pulsed Drain Current-Max (IDM) 152A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 25.3 mJ
Height 2.38mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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