Parameters | |
---|---|
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Height | 2.38mm |
Surface Mount | YES |
Number of Pins | 4 |
Transistor Element Material | SILICON |
Length | 6.73mm |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Width | 6.22mm |
Published | 2009 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Radiation Hardening | No |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
REACH SVHC | No SVHC |
ECCN Code | EAR99 |
RoHS Status | RoHS Compliant |
Resistance | 9.6MOhm |
Lead Free | Lead Free |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Powers |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Pin Count | 4 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Power Dissipation-Max | 1.1W Ta 35.7W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 35.7W |
Case Connection | DRAIN |
Turn On Delay Time | 12 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 9.6m Ω @ 30A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1035pF @ 12V |
Current - Continuous Drain (Id) @ 25°C | 8.1A Ta 44A Tc |
Gate Charge (Qg) (Max) @ Vgs | 16.2nC @ 10V |
Rise Time | 20ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 3 ns |
Turn-Off Delay Time | 14 ns |
Continuous Drain Current (ID) | 8.1A |
Threshold Voltage | 2.5V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 30V |
Avalanche Energy Rating (Eas) | 33.8 mJ |
Lifecycle Status | LAST SHIPMENTS (Last Updated: 2 days ago) |
Nominal Vgs | 2.5 V |