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NTD4969NT4G

MOSFET TRENCH 3.1 30V 9 mOhm NCH


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NTD4969NT4G
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 631
  • Description: MOSFET TRENCH 3.1 30V 9 mOhm NCH (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 1.38W Ta 26.3W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 26.3W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 837pF @ 15V
Current - Continuous Drain (Id) @ 25°C 9.4A Ta 41A Tc
Gate Charge (Qg) (Max) @ Vgs 9nC @ 4.5V
Rise Time 27ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6.4 ns
Turn-Off Delay Time 13.3 ns
Continuous Drain Current (ID) 12.7A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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