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NTD50N03R-1G

MOSFET N-CH 25V 7.8A IPAK


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NTD50N03R-1G
  • Package: TO-251-3 Stub Leads, IPak
  • Datasheet: PDF
  • Stock: 365
  • Description: MOSFET N-CH 25V 7.8A IPAK (Kg)

Details

Tags

Parameters
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Stub Leads, IPak
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 25V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Current Rating 45A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1.5W Ta 50W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 50W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12m Ω @ 30A, 11.5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 12V
Current - Continuous Drain (Id) @ 25°C 7.8A Ta 45A Tc
Gate Charge (Qg) (Max) @ Vgs 15nC @ 11.5V
Rise Time 84ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Vgs (Max) ±20V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 45A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 7.8A
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 180A
Avalanche Energy Rating (Eas) 20 mJ
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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