NTE4151PT1G
| Parameters | |
|---|---|
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 313mW Tj |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 313mW |
| Turn On Delay Time | 8 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 360m Ω @ 350mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 156pF @ 5V |
| Current - Continuous Drain (Id) @ 25°C | 760mA Tj |
| Gate Charge (Qg) (Max) @ Vgs | 2.1nC @ 4.5V |
| Rise Time | 8.2ns |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
| Vgs (Max) | ±6V |
| Factory Lead Time | 1 Week |
| Fall Time (Typ) | 8.2 ns |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mounting Type | Surface Mount |
| Turn-Off Delay Time | 29 ns |
| Continuous Drain Current (ID) | 760mA |
| Package / Case | SC-89, SOT-490 |
| Gate to Source Voltage (Vgs) | 6V |
| Surface Mount | YES |
| Number of Pins | 3 |
| Drain Current-Max (Abs) (ID) | 0.76A |
| Transistor Element Material | SILICON |
| Drain to Source Breakdown Voltage | -20V |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e3 |
| Height | 800μm |
| Pbfree Code | yes |
| Part Status | Active |
| Length | 1.6764mm |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Width | 950μm |
| Resistance | 260mOhm |
| Radiation Hardening | No |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| RoHS Status | ROHS3 Compliant |
| Voltage - Rated DC | -20V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Lead Free | Lead Free |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -760mA |
| Time@Peak Reflow Temperature-Max (s) | 40 |
See Relate Datesheet
