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NTE4153NT1G

NTE4153NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NTE4153NT1G
  • Package: SC-89, SOT-490
  • Datasheet: PDF
  • Stock: 407
  • Description: NTE4153NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 230MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating 915mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Power Dissipation-Max 300mW Tj
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300mW
Turn On Delay Time 3.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 230m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 110pF @ 16V
Current - Continuous Drain (Id) @ 25°C 915mA Ta
Gate Charge (Qg) (Max) @ Vgs 1.82nC @ 4.5V
Rise Time 4.4ns
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±6V
Fall Time (Typ) 4.4 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 915mA
Threshold Voltage 760mV
Gate to Source Voltage (Vgs) 6V
Drain to Source Breakdown Voltage 20V
Nominal Vgs 760 mV
Height 800μm
Length 1.7mm
Width 950μm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Package / Case SC-89, SOT-490
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
See Relate Datesheet

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