Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 6 days ago) |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |
Surface Mount | YES |
Number of Pins | 4 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2007 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
Termination | SMD/SMT |
ECCN Code | EAR99 |
Resistance | 44MOhm |
Terminal Finish | Tin (Sn) |
Additional Feature | AVALANCHE RATED |
Subcategory | Other Transistors |
Voltage - Rated DC | -20V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | -6A |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 4 |
Number of Elements | 1 |
Power Dissipation-Max | 8.3W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 8.3W |
Case Connection | DRAIN |
Turn On Delay Time | 7 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 50m Ω @ 6A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 16V |
Current - Continuous Drain (Id) @ 25°C | 10A Ta |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
Rise Time | 25ns |
Drain to Source Voltage (Vdss) | 20V |
Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
Vgs (Max) | ±8V |
Fall Time (Typ) | 50 ns |
Turn-Off Delay Time | 75 ns |
Continuous Drain Current (ID) | 10A |
Threshold Voltage | -700mV |
Gate to Source Voltage (Vgs) | 8V |
Drain to Source Breakdown Voltage | -20V |
Pulsed Drain Current-Max (IDM) | 35A |
Dual Supply Voltage | -20V |
Height | 1.65mm |
Length | 6.7mm |
Width | 3.7mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |