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NTGS3130NT1G

MOSFET N-CH 20V 4.2A 6-TSOP


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NTGS3130NT1G
  • Package: SOT-23-6
  • Datasheet: PDF
  • Stock: 481
  • Description: MOSFET N-CH 20V 4.2A 6-TSOP (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Package / Case SOT-23-6
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Number of Elements 1
Power Dissipation-Max 600mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.1W
Turn On Delay Time 6.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 24m Ω @ 5.6A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 935pF @ 16V
Current - Continuous Drain (Id) @ 25°C 4.23A Ta
Gate Charge (Qg) (Max) @ Vgs 20.3nC @ 4.5V
Rise Time 7.3ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 7.3 ns
Turn-Off Delay Time 21.7 ns
Continuous Drain Current (ID) 5.6A
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 4.2A
Drain-source On Resistance-Max 0.024Ohm
Drain to Source Breakdown Voltage 20V
Height 1mm
Length 3.1mm
Width 1.7mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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