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NTGS3441PT1G

MOSFET P-CH 20V 1.8A 6-TSOP


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NTGS3441PT1G
  • Package: SOT-23-6
  • Datasheet: PDF
  • Stock: 894
  • Description: MOSFET P-CH 20V 1.8A 6-TSOP (Kg)

Details

Tags

Parameters
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 510mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 980mW
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 110m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id 1.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 345pF @ 15V
Current - Continuous Drain (Id) @ 25°C 1.8A Ta
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
Rise Time 14ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) -2.5A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 1.8A
Drain-source On Resistance-Max 0.11Ohm
Drain to Source Breakdown Voltage -20V
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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