Parameters | |
---|---|
Packaging | Cut Tape (CT) |
Published | 2006 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
Termination | SMD/SMT |
ECCN Code | EAR99 |
Resistance | 90MOhm |
Terminal Finish | Tin (Sn) |
Subcategory | Other Transistors |
Voltage - Rated DC | -20V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | -1A |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 6 |
Number of Elements | 1 |
Power Dissipation-Max | 500mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1W |
Turn On Delay Time | 13 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 90m Ω @ 3.3A, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 480pF @ 5V |
Current - Continuous Drain (Id) @ 25°C | 1.65A Ta |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 4.5V |
Rise Time | 23.5ns |
Drain to Source Voltage (Vdss) | 20V |
Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
Vgs (Max) | ±8V |
Fall Time (Typ) | 24 ns |
Turn-Off Delay Time | 27 ns |
Continuous Drain Current (ID) | 2.35A |
Threshold Voltage | -1.05V |
Gate to Source Voltage (Vgs) | 8V |
Drain to Source Breakdown Voltage | -20V |
Dual Supply Voltage | -20V |
Nominal Vgs | -1.05 V |
Height | 1mm |
Length | 3.1mm |
Width | 1.7mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 |
Surface Mount | YES |
Number of Pins | 6 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |