Parameters | |
---|---|
Input Capacitance (Ciss) (Max) @ Vds | 480pF @ 5V |
Current - Continuous Drain (Id) @ 25°C | 2.5A Ta |
Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
Rise Time | 15ns |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 10 ns |
Turn-Off Delay Time | 20 ns |
Continuous Drain Current (ID) | 3.5A |
Threshold Voltage | -1.87V |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 2.5A |
Drain to Source Breakdown Voltage | -30V |
Nominal Vgs | -1.87 V |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 1 week ago) |
Height | 990.6μm |
Mounting Type | Surface Mount |
Length | 3.0988mm |
Package / Case | SOT-23-6 |
Surface Mount | YES |
Number of Pins | 6 |
Transistor Element Material | SILICON |
Width | 1.7018mm |
Operating Temperature | -55°C~150°C TJ |
Radiation Hardening | No |
Packaging | Tape & Reel (TR) |
REACH SVHC | No SVHC |
Published | 2006 |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Resistance | 100MOhm |
Terminal Finish | Tin (Sn) |
Subcategory | Other Transistors |
Voltage - Rated DC | -30V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | -3.5A |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 6 |
Number of Elements | 1 |
Power Dissipation-Max | 500mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2W |
Turn On Delay Time | 10 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 100m Ω @ 3.5A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |