Parameters | |
---|---|
Max Power Dissipation | 600mW |
Terminal Form | C BEND |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 5.5A |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | NTHD3102C |
Pin Count | 8 |
Number of Elements | 2 |
Element Configuration | Dual |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 600mW |
Turn On Delay Time | 7.2 ns |
Power - Max | 1.1W |
FET Type | N and P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 45m Ω @ 4.4A, 4.5V |
Vgs(th) (Max) @ Id | 1.2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 510pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 4A 3.1A |
Gate Charge (Qg) (Max) @ Vgs | 7.9nC @ 4.5V |
Rise Time | 16.9ns |
Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
Fall Time (Typ) | 16.9 ns |
Turn-Off Delay Time | 15.7 ns |
Continuous Drain Current (ID) | 5.5A |
Threshold Voltage | 400mV |
Gate to Source Voltage (Vgs) | 8V |
Drain Current-Max (Abs) (ID) | 4A |
Drain-source On Resistance-Max | 0.045Ohm |
Drain to Source Breakdown Voltage | -20V |
Pulsed Drain Current-Max (IDM) | 16A |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
FET Feature | Logic Level Gate |
Height | 1.1mm |
Length | 3.1mm |
Width | 1.7mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
Mounting Type | Surface Mount |
Package / Case | 8-SMD, Flat Lead |
Surface Mount | YES |
Number of Pins | 8 |
Weight | 4.535924g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2005 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Voltage - Rated DC | 20V |