Parameters | |
---|---|
Mounting Type | Surface Mount |
Package / Case | 8-SMD, Flat Lead |
Surface Mount | YES |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
Terminal Finish | TIN |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | C BEND |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 8 |
JESD-30 Code | R-XDSO-C8 |
Qualification Status | COMMERCIAL |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 1.1W Ta |
Operating Mode | ENHANCEMENT MODE |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 80m Ω @ 3.2A, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 680pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 3.2A Tj |
Gate Charge (Qg) (Max) @ Vgs | 7.4nC @ 4.5V |
Drain to Source Voltage (Vdss) | 20V |
Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
Vgs (Max) | ±8V |
Drain Current-Max (Abs) (ID) | 3.2A |
Drain-source On Resistance-Max | 0.08Ohm |
DS Breakdown Voltage-Min | 20V |
FET Feature | Schottky Diode (Isolated) |
RoHS Status | ROHS3 Compliant |