Parameters | |
---|---|
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | C BEND |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 8 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Power Dissipation-Max | 800mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Factory Lead Time | 1 Week |
Power Dissipation | 1.5W |
Turn On Delay Time | 12 ns |
Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
FET Type | N-Channel |
Mount | Surface Mount |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 22m Ω @ 4.9A, 10V |
Mounting Type | Surface Mount |
Vgs(th) (Max) @ Id | 2.3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 4.9A Ta |
Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
Package / Case | 8-SMD, Flat Lead |
Rise Time | 11ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Number of Pins | 8 |
Vgs (Max) | ±20V |
Fall Time (Typ) | 11 ns |
Turn-Off Delay Time | 20 ns |
Transistor Element Material | SILICON |
Continuous Drain Current (ID) | 6.6A |
Gate to Source Voltage (Vgs) | 20V |
Operating Temperature | -55°C~150°C TJ |
Drain Current-Max (Abs) (ID) | 4.9A |
Drain-source On Resistance-Max | 0.022Ohm |
Packaging | Tape & Reel (TR) |
Drain to Source Breakdown Voltage | 30V |
Height | 1.1mm |
Length | 3.1mm |
Published | 2007 |
Width | 1.7mm |
RoHS Status | ROHS3 Compliant |
JESD-609 Code | e3 |
Lead Free | Lead Free |