NTHS5404T1G
| Parameters | |
|---|---|
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 17 hours ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SMD, Flat Lead |
| Number of Pins | 8 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 20V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | C BEND |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 5.2A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 8 |
| Number of Elements | 1 |
| Power Dissipation-Max | 1.3W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.3W |
| Turn On Delay Time | 8 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 30m Ω @ 5.2A, 4.5V |
| Vgs(th) (Max) @ Id | 600mV @ 250μA |
| Current - Continuous Drain (Id) @ 25°C | 5.2A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V |
| Rise Time | 7ns |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
| Vgs (Max) | ±12V |
| Fall Time (Typ) | 7 ns |
| Turn-Off Delay Time | 50 ns |
| Continuous Drain Current (ID) | 7.2A |
| Threshold Voltage | 600mV |
| Gate to Source Voltage (Vgs) | 12V |
| Drain-source On Resistance-Max | 0.03Ohm |
| Drain to Source Breakdown Voltage | 20V |
| Dual Supply Voltage | 20V |
| Input Capacitance | 740pF |
| Height | 1.1mm |
| Length | 3.1mm |
| Width | 1.7mm |
| Radiation Hardening | No |
See Relate Datesheet
