NTJS4151PT1G
| Parameters | |
|---|---|
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
| Surface Mount | YES |
| Vgs (Max) | ±12V |
| Number of Pins | 6 |
| Fall Time (Typ) | 4.2 ns |
| Transistor Element Material | SILICON |
| Turn-Off Delay Time | 2.7 ns |
| Operating Temperature | -55°C~150°C TJ |
| Continuous Drain Current (ID) | 4.2A |
| Packaging | Tape & Reel (TR) |
| Threshold Voltage | -400mV |
| Gate to Source Voltage (Vgs) | 12V |
| Published | 2005 |
| Drain to Source Breakdown Voltage | -20V |
| JESD-609 Code | e3 |
| Height | 1mm |
| Pbfree Code | yes |
| Length | 2.2mm |
| Part Status | Active |
| Width | 1.35mm |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Radiation Hardening | No |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| REACH SVHC | No SVHC |
| Resistance | 47MOhm |
| RoHS Status | ROHS3 Compliant |
| Terminal Finish | Tin (Sn) |
| Lead Free | Lead Free |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | -20V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -3.3A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 6 |
| Number of Elements | 1 |
| Power Dissipation-Max | 1W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1W |
| Turn On Delay Time | 850 ps |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 60m Ω @ 3.3A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 850pF @ 10V |
| Factory Lead Time | 1 Week |
| Current - Continuous Drain (Id) @ 25°C | 3.3A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4.5V |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mounting Type | Surface Mount |
| Rise Time | 1.7ns |
See Relate Datesheet
