Parameters | |
---|---|
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 350m Ω @ 890mA, 4.5V |
Vgs(th) (Max) @ Id | 1.2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 120pF @ 16V |
Current - Continuous Drain (Id) @ 25°C | 750mA Ta |
Rise Time | 4.8ns |
Drive Voltage (Max Rds On,Min Rds On) | 1.5V 4.5V |
Vgs (Max) | ±6V |
Fall Time (Typ) | 4.8 ns |
Turn-Off Delay Time | 17.3 ns |
Continuous Drain Current (ID) | 890mA |
Gate to Source Voltage (Vgs) | 6V |
Drain Current-Max (Abs) (ID) | 0.89A |
Drain to Source Breakdown Voltage | 20V |
Nominal Vgs | 1.2 V |
Feedback Cap-Max (Crss) | 15 pF |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
Mounting Type | Surface Mount |
Package / Case | SOT-723 |
Surface Mount | YES |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2006 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | FLAT |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Power Dissipation-Max | 310mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 310mW |