Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
Contact Plating | Tin |
Mounting Type | Surface Mount |
Package / Case | SOT-723 |
Surface Mount | YES |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2006 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 380mOhm |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | FLAT |
Pin Count | 3 |
Number of Elements | 1 |
Power Dissipation-Max | 310mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 310mW |
Turn On Delay Time | 9 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 480m Ω @ 780mA, 4.5V |
Vgs(th) (Max) @ Id | 1.2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 170pF @ 16V |
Current - Continuous Drain (Id) @ 25°C | 660mA Ta |
Rise Time | 5.8ns |
Drain to Source Voltage (Vdss) | 20V |
Drive Voltage (Max Rds On,Min Rds On) | 1.5V 4.5V |
Vgs (Max) | ±6V |
Fall Time (Typ) | 5.8 ns |
Turn-Off Delay Time | 32.7 ns |
Continuous Drain Current (ID) | -780mA |
Gate to Source Voltage (Vgs) | 6V |
Drain Current-Max (Abs) (ID) | 0.66A |
Drain to Source Breakdown Voltage | -20V |
Pulsed Drain Current-Max (IDM) | 1.2A |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |