Parameters | |
---|---|
Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 week ago) |
Mounting Type | Surface Mount |
Package / Case | 6-VDFN Exposed Pad |
Surface Mount | YES |
Number of Pins | 6 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2006 |
Series | FETKY™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Voltage - Rated DC | -20V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | C BEND |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | -3.9A |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 6 |
JESD-30 Code | R-XDSO-C8 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 1.14W Ta |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.6W |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 140m Ω @ 2.7A, 4.5V |
Vgs(th) (Max) @ Id | 2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 2.3A Ta |
Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4.5V |
Rise Time | 22ns |
Drain to Source Voltage (Vdss) | 20V |
Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
Vgs (Max) | ±12V |
Fall Time (Typ) | 22 ns |
Turn-Off Delay Time | 25 ns |
Continuous Drain Current (ID) | 2.3A |
Gate to Source Voltage (Vgs) | 12V |
Drain-source On Resistance-Max | 0.14Ohm |
Drain to Source Breakdown Voltage | -20V |
Pulsed Drain Current-Max (IDM) | 11A |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |