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NTLJF3117PTAG

MOSFET PFET 20V 4.1A 106MO 2X2


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NTLJF3117PTAG
  • Package: 6-WDFN Exposed Pad
  • Datasheet: PDF
  • Stock: 746
  • Description: MOSFET PFET 20V 4.1A 106MO 2X2 (Kg)

Details

Tags

Parameters
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 710mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 710mW
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 531pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2.3A Ta
Gate Charge (Qg) (Max) @ Vgs 6.2nC @ 4.5V
Rise Time 13.2ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 19.1 ns
Turn-Off Delay Time 13.7 ns
Continuous Drain Current (ID) 2.3A
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 3.3A
Drain-source On Resistance-Max 0.135Ohm
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 20A
FET Feature Schottky Diode (Isolated)
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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