Parameters | |
---|---|
Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 week ago) |
Mounting Type | Surface Mount |
Package / Case | 6-WDFN Exposed Pad |
Surface Mount | YES |
Number of Pins | 6 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2006 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | C BEND |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 6 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Power Dissipation-Max | 710mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 710mW |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 100m Ω @ 2A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 531pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 2.3A Ta |
Gate Charge (Qg) (Max) @ Vgs | 6.2nC @ 4.5V |
Rise Time | 13.2ns |
Drain to Source Voltage (Vdss) | 20V |
Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
Vgs (Max) | ±8V |
Fall Time (Typ) | 19.1 ns |
Turn-Off Delay Time | 13.7 ns |
Continuous Drain Current (ID) | 2.3A |
Gate to Source Voltage (Vgs) | 8V |
Drain Current-Max (Abs) (ID) | 3.3A |
Drain-source On Resistance-Max | 0.135Ohm |
Drain to Source Breakdown Voltage | -20V |
Pulsed Drain Current-Max (IDM) | 20A |
FET Feature | Schottky Diode (Isolated) |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |