Parameters | |
---|---|
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 700mW |
Case Connection | DRAIN |
Factory Lead Time | 1 Week |
Turn On Delay Time | 5 ns |
Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
FET Type | N-Channel |
Mounting Type | Surface Mount |
Transistor Application | SWITCHING |
Package / Case | 6-WDFN Exposed Pad |
Rds On (Max) @ Id, Vgs | 35m Ω @ 2A, 4.5V |
Surface Mount | YES |
Vgs(th) (Max) @ Id | 1V @ 250μA |
Number of Pins | 6 |
Transistor Element Material | SILICON |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 650pF @ 15V |
Operating Temperature | -55°C~150°C TJ |
Current - Continuous Drain (Id) @ 25°C | 3.6A Ta |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) (Max) @ Vgs | 13nC @ 4.5V |
Rise Time | 9ns |
Published | 2005 |
Series | µCool™ |
Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
JESD-609 Code | e3 |
Vgs (Max) | ±12V |
Pbfree Code | yes |
Part Status | Active |
Fall Time (Typ) | 9 ns |
Turn-Off Delay Time | 20 ns |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Continuous Drain Current (ID) | 7.8A |
Number of Terminations | 6 |
Threshold Voltage | 550mV |
ECCN Code | EAR99 |
Gate to Source Voltage (Vgs) | 12V |
Resistance | 35MOhm |
Drain to Source Breakdown Voltage | 30V |
Terminal Finish | Tin (Sn) |
Pulsed Drain Current-Max (IDM) | 28A |
Additional Feature | LOGIC LEVEL COMPATIBLE |
Nominal Vgs | 550 mV |
Subcategory | FET General Purpose Power |
Height | 750μm |
Length | 2mm |
Width | 2mm |
Technology | MOSFET (Metal Oxide) |
Radiation Hardening | No |
REACH SVHC | No SVHC |
Terminal Position | DUAL |
RoHS Status | ROHS3 Compliant |
Terminal Form | C BEND |
Lead Free | Lead Free |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 6 |
Number of Elements | 1 |
Power Dissipation-Max | 700mW Ta |