Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 23 hours ago) |
Contact Plating | Tin |
Mounting Type | Surface Mount |
Package / Case | 6-UFDFN Exposed Pad |
Surface Mount | YES |
Number of Pins | 6 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2010 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Subcategory | Other Transistors |
Max Power Dissipation | 500mW |
Pin Count | 6 |
Number of Elements | 2 |
Element Configuration | Dual |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 800mW |
Case Connection | DRAIN |
Turn On Delay Time | 17.4 ns |
FET Type | 2 P-Channel (Dual) |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 200m Ω @ 2A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 1.3A |
Gate Charge (Qg) (Max) @ Vgs | 4.2nC @ 4.5V |
Rise Time | 32.3ns |
Drain to Source Voltage (Vdss) | 20V |
Fall Time (Typ) | 74 ns |
Turn-Off Delay Time | 149 ns |
Continuous Drain Current (ID) | 1.7A |
Gate to Source Voltage (Vgs) | 8V |
Drain Current-Max (Abs) (ID) | 1.3A |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
FET Feature | Logic Level Gate |
Height | 500μm |
Length | 1.6mm |
Width | 1.6mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |