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NTLUS3A90PZTBG

IGBT Transistors POWER MOSFET 20V 3A 60 MO


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NTLUS3A90PZTBG
  • Package: 6-PowerUFDFN
  • Datasheet: PDF
  • Stock: 956
  • Description: IGBT Transistors POWER MOSFET 20V 3A 60 MO (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case 6-PowerUFDFN
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Pin Count 6
JESD-30 Code S-PDSO-N3
Number of Elements 1
Power Dissipation-Max 600mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Case Connection DRAIN
Turn On Delay Time 7.9 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 62m Ω @ 4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2.6A Ta
Gate Charge (Qg) (Max) @ Vgs 12.3nC @ 4.5V
Rise Time 15.7ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 28.5 ns
Turn-Off Delay Time 34.8 ns
Continuous Drain Current (ID) 4A
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 4A
DS Breakdown Voltage-Min 20V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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