Parameters | |
---|---|
Lifecycle Status | LAST SHIPMENTS (Last Updated: 2 weeks ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN, 5 Leads |
Number of Pins | 5 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2007 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 30V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | FLAT |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 18A |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 5 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 900mW Ta |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.3W |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 3.5m Ω @ 29A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 4800pF @ 24V |
Current - Continuous Drain (Id) @ 25°C | 11A Ta |
Gate Charge (Qg) (Max) @ Vgs | 60nC @ 4.5V |
Rise Time | 26ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 40 ns |
Turn-Off Delay Time | 35 ns |
Continuous Drain Current (ID) | 11A |
Gate to Source Voltage (Vgs) | 12V |
Drain to Source Breakdown Voltage | 30V |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |