Parameters | |
---|---|
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 11.5V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 3.8 ns |
Turn-Off Delay Time | 12.7 ns |
Continuous Drain Current (ID) | 30A |
Threshold Voltage | 1.9V |
Gate to Source Voltage (Vgs) | 16V |
Drain Current-Max (Abs) (ID) | 6.9A |
Drain to Source Breakdown Voltage | 30V |
Height | 1.1mm |
Length | 5.1mm |
Width | 6.1mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Lead Free | Lead Free |
Lifecycle Status | ACTIVE (Last Updated: 5 days ago) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN, 5 Leads |
Surface Mount | YES |
Number of Pins | 5 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2005 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Resistance | 10.6MOhm |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | FLAT |
Pin Count | 5 |
Number of Elements | 1 |
Power Dissipation-Max | 860mW Ta 32.5W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 5.43W |
Case Connection | DRAIN |
Turn On Delay Time | 10.8 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 10.6m Ω @ 30A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 795pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 6.9A Ta 30A Tc |
Gate Charge (Qg) (Max) @ Vgs | 13nC @ 11.5V |
Rise Time | 29ns |