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NTMFS4835NT3G

MOSFET N-CH 30V 12A SO-8FL


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NTMFS4835NT3G
  • Package: 8-PowerTDFN, 5 Leads
  • Datasheet: PDF
  • Stock: 850
  • Description: MOSFET N-CH 30V 12A SO-8FL (Kg)

Details

Tags

Parameters
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 12V
Current - Continuous Drain (Id) @ 25°C 13A Ta 130A Tc
Gate Charge (Qg) (Max) @ Vgs 52nC @ 11.5V
Rise Time 31ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 12A
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 208A
Avalanche Energy Rating (Eas) 392 mJ
RoHS Status RoHS Compliant
Lead Free Lead Free
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN, 5 Leads
Surface Mount YES
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 5
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 890mW Ta 62.5W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 62.5W
Case Connection DRAIN
FET Type N-Channel
See Relate Datesheet

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