Parameters | |
---|---|
Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 day ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN, 5 Leads |
Number of Pins | 5 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2009 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | FLAT |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 5 |
JESD-30 Code | R-PDSO-F6 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Power Dissipation-Max | 880mW Ta 47.2W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.2W |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 5m Ω @ 30A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 2048pF @ 12V |
Current - Continuous Drain (Id) @ 25°C | 10A Ta 74A Tc |
Gate Charge (Qg) (Max) @ Vgs | 22nC @ 4.5V |
Rise Time | 55ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 11.5V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 10 ns |
Turn-Off Delay Time | 19 ns |
Continuous Drain Current (ID) | 74A |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 10A |
Drain to Source Breakdown Voltage | 30V |
Pulsed Drain Current-Max (IDM) | 148A |
Avalanche Energy Rating (Eas) | 242 mJ |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |