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NTMFS4841NT1G

Mosfet Transistor, N Channel, 57 A, 30 V, 4.7 Mohm, 11.5 V, 2.5 V Rohs Compliant: Yes


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NTMFS4841NT1G
  • Package: 8-PowerTDFN, 5 Leads
  • Datasheet: PDF
  • Stock: 867
  • Description: Mosfet Transistor, N Channel, 57 A, 30 V, 4.7 Mohm, 11.5 V, 2.5 V Rohs Compliant: Yes (Kg)

Details

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Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN, 5 Leads
Surface Mount YES
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 5
Number of Elements 1
Power Dissipation-Max 870mW Ta 41.7W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 5W
Case Connection DRAIN
Turn On Delay Time 13.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1436pF @ 12V
Current - Continuous Drain (Id) @ 25°C 8.3A Ta 57A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Rise Time 66.5ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7.5 ns
Turn-Off Delay Time 15.5 ns
Continuous Drain Current (ID) 13.1A
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 8.3A
Drain to Source Breakdown Voltage 30V
Height 1.1mm
Length 5.1mm
Width 6.1mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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