Parameters | |
---|---|
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | FLAT |
Pin Count | 5 |
Max Output Current | 115A |
Number of Elements | 1 |
Max Supply Voltage | 30V |
Power Dissipation-Max | 890mW Ta 62.5W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 5.95W |
Case Connection | DRAIN |
Turn On Delay Time | 20.5 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 2.9m Ω @ 30A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 3720pF @ 12V |
Current - Continuous Drain (Id) @ 25°C | 13.7A Ta 115A Tc |
Gate Charge (Qg) (Max) @ Vgs | 62nC @ 11.5V |
Rise Time | 48.5ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Factory Lead Time | 1 Week |
Vgs (Max) | ±16V |
Lifecycle Status | ACTIVE (Last Updated: 21 hours ago) |
Fall Time (Typ) | 12.2 ns |
Mounting Type | Surface Mount |
Turn-Off Delay Time | 28.9 ns |
Package / Case | 8-PowerTDFN, 5 Leads |
Continuous Drain Current (ID) | 115A |
Surface Mount | YES |
Gate to Source Voltage (Vgs) | 16V |
Drain-source On Resistance-Max | 0.0044Ohm |
Drain to Source Breakdown Voltage | 30V |
Number of Pins | 5 |
Radiation Hardening | No |
Transistor Element Material | SILICON |
RoHS Status | ROHS3 Compliant |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Lead Free | Lead Free |
Published | 2007 |
JESD-609 Code | e3 |