banner_page

NTMFS4927NCT3G

MOSFET N-CH 30V 8SOFL


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NTMFS4927NCT3G
  • Package: 8-PowerTDFN, 5 Leads
  • Datasheet: PDF
  • Stock: 622
  • Description: MOSFET N-CH 30V 8SOFL (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case 8-PowerTDFN, 5 Leads
Surface Mount YES
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Number of Elements 1
Power Dissipation-Max 920mW Ta 20.8W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 9.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.3m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 913pF @ 15V
Current - Continuous Drain (Id) @ 25°C 7.9A Ta 38A Tc
Gate Charge (Qg) (Max) @ Vgs 8nC @ 4.5V
Rise Time 25.5ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.4 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 38A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 7.9A
Drain-source On Resistance-Max 0.012Ohm
DS Breakdown Voltage-Min 30V
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good