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NTMFS4935NT3G

MOSFET N-CH 30V 13A SO8FL


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NTMFS4935NT3G
  • Package: 8-PowerTDFN, 5 Leads
  • Datasheet: PDF
  • Stock: 600
  • Description: MOSFET N-CH 30V 13A SO8FL (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case 8-PowerTDFN, 5 Leads
Surface Mount YES
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 5
Number of Elements 1
Power Dissipation-Max 930mW Ta 48W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 16.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.2m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4850pF @ 15V
Current - Continuous Drain (Id) @ 25°C 13A Ta 93A Tc
Gate Charge (Qg) (Max) @ Vgs 49.4nC @ 10V
Rise Time 20ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6.6 ns
Turn-Off Delay Time 27.5 ns
Continuous Drain Current (ID) 93A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 21.8A
Drain-source On Resistance-Max 0.0042Ohm
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 110 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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