Parameters | |
---|---|
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2012 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | FLAT |
Pin Count | 5 |
Number of Elements | 1 |
Power Dissipation-Max | 920mW Ta 43W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
Turn On Delay Time | 10.4 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 3.8m Ω @ 30A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 3044pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 11.6A Ta 79A Tc |
Gate Charge (Qg) (Max) @ Vgs | 43nC @ 10V |
Rise Time | 19ns |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 8 ns |
Turn-Off Delay Time | 29 ns |
Continuous Drain Current (ID) | 79A |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 11.6A |
DS Breakdown Voltage-Min | 30V |
Avalanche Energy Rating (Eas) | 96.8 mJ |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 1 week ago) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN, 5 Leads |
Surface Mount | YES |
Number of Pins | 5 |