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NTMFS4937NT3G

MOSFET N-CH 30V 10.2A SO8FL


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NTMFS4937NT3G
  • Package: 8-PowerTDFN, 5 Leads
  • Datasheet: PDF
  • Stock: 920
  • Description: MOSFET N-CH 30V 10.2A SO8FL (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN, 5 Leads
Surface Mount YES
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 5
Number of Elements 1
Power Dissipation-Max 920mW Ta 43W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2516pF @ 15V
Current - Continuous Drain (Id) @ 25°C 10.2A Ta 70A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 70A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 10.2A
Drain-source On Resistance-Max 0.007Ohm
Pulsed Drain Current-Max (IDM) 210A
DS Breakdown Voltage-Min 30V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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