Parameters | |
---|---|
Number of Pins | 5 |
Continuous Drain Current (ID) | 100A |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Gate to Source Voltage (Vgs) | 20V |
Packaging | Tape & Reel (TR) |
Drain Current-Max (Abs) (ID) | 12.7A |
Published | 2007 |
Drain to Source Breakdown Voltage | 30V |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Radiation Hardening | No |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Subcategory | FET General Purpose Power |
RoHS Status | ROHS3 Compliant |
Technology | MOSFET (Metal Oxide) |
Lead Free | Lead Free |
Terminal Position | DUAL |
Terminal Form | FLAT |
Pin Count | 5 |
Number of Elements | 1 |
Power Dissipation-Max | 890mW Ta 55.5W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.25W |
Case Connection | DRAIN |
Turn On Delay Time | 18.9 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 3.4m Ω @ 30A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 3250pF @ 12V |
Current - Continuous Drain (Id) @ 25°C | 12.7A Ta 100A Tc |
Gate Charge (Qg) (Max) @ Vgs | 53nC @ 11.5V |
Rise Time | 34ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 11.5V |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
Vgs (Max) | ±20V |
Contact Plating | Tin |
Fall Time (Typ) | 9.4 ns |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN, 5 Leads |
Turn-Off Delay Time | 24.6 ns |
Surface Mount | YES |