Parameters | |
---|---|
Drain-source On Resistance-Max | 0.0019Ohm |
Operating Temperature | -55°C~150°C TJ |
DS Breakdown Voltage-Min | 30V |
Packaging | Tape & Reel (TR) |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Published | 2014 |
Lead Free | Lead Free |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | FLAT |
Pin Count | 5 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 1.5W Ta |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 1.3m Ω @ 25A, 10V |
Factory Lead Time | 1 Week |
Vgs(th) (Max) @ Id | 2.2V @ 1mA |
Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
Input Capacitance (Ciss) (Max) @ Vds | 6000pF @ 15V |
Mounting Type | Surface Mount |
Current - Continuous Drain (Id) @ 25°C | 26.5A Ta 207A Tc |
Package / Case | 8-PowerTDFN |
Gate Charge (Qg) (Max) @ Vgs | 84nC @ 10V |
Drain to Source Voltage (Vdss) | 30V |
Surface Mount | YES |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Number of Pins | 5 |
Vgs (Max) | ±20V |
Continuous Drain Current (ID) | 207A |
Transistor Element Material | SILICON |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 36A |