Parameters | |
---|---|
JESD-609 Code | e3 |
Current - Continuous Drain (Id) @ 25°C | 22A Ta 106A Tc |
Pbfree Code | yes |
Gate Charge (Qg) (Max) @ Vgs | 47.9nC @ 10V |
Part Status | Active |
Rise Time | 24.9ns |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Drain to Source Voltage (Vdss) | 30V |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Terminal Finish | Tin (Sn) |
Vgs (Max) | ±20V |
Subcategory | FET General Purpose Power |
Fall Time (Typ) | 10.7 ns |
Turn-Off Delay Time | 28.7 ns |
Technology | MOSFET (Metal Oxide) |
Continuous Drain Current (ID) | 106A |
Terminal Position | DUAL |
Gate to Source Voltage (Vgs) | 20V |
Terminal Form | FLAT |
Drain Current-Max (Abs) (ID) | 22A |
Pulsed Drain Current-Max (IDM) | 320A |
DS Breakdown Voltage-Min | 30V |
Pin Count | 5 |
Radiation Hardening | No |
Number of Elements | 1 |
RoHS Status | ROHS3 Compliant |
Configuration | SINGLE WITH BUILT-IN DIODE |
Lead Free | Lead Free |
Number of Channels | 1 |
Power Dissipation-Max | 1.7W Ta 38W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
Factory Lead Time | 1 Week |
Turn On Delay Time | 13.5 ns |
Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
Mounting Type | Surface Mount |
FET Type | N-Channel |
Package / Case | 8-PowerTDFN |
Surface Mount | YES |
Transistor Application | SWITCHING |
Number of Pins | 5 |
Rds On (Max) @ Id, Vgs | 2.1m Ω @ 30A, 10V |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Vgs(th) (Max) @ Id | 2.3V @ 1mA |
Packaging | Tape & Reel (TR) |
Published | 2014 |
Input Capacitance (Ciss) (Max) @ Vds | 3250pF @ 15V |