banner_page

NTMFS4C10NT1G

NTMFS4C10NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NTMFS4C10NT1G
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 201
  • Description: NTMFS4C10NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 20 hours ago)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Reach Compliance Code not_compliant
Pin Count 5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 750mW Ta 23.6W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.95m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 987pF @ 15V
Current - Continuous Drain (Id) @ 25°C 8.2A Ta
Gate Charge (Qg) (Max) @ Vgs 9.7nC @ 4.5V
Rise Time 34ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 46A
Threshold Voltage 2.2V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 8.2A
DS Breakdown Voltage-Min 30V
Height 1.05mm
Length 6.1mm
Width 5.1mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good