Parameters | |
---|---|
Number of Elements | 1 |
Power Dissipation-Max | 3.1W Ta 96W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 3.1W |
Turn On Delay Time | 13 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 4.2m Ω @ 20A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 2700pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 20A Ta 111A Tc |
Gate Charge (Qg) (Max) @ Vgs | 51nC @ 10V |
Rise Time | 24ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 8 ns |
Turn-Off Delay Time | 27 ns |
Continuous Drain Current (ID) | 20A |
Threshold Voltage | 1V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 40V |
Pulsed Drain Current-Max (IDM) | 443A |
Height | 1.1mm |
Length | 5.1mm |
Width | 6.1mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 6 days ago) |
Contact Plating | Tin |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN, 5 Leads |
Surface Mount | YES |
Number of Pins | 5 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2006 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Resistance | 6.5MOhm |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | FLAT |
Pin Count | 5 |