Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN, 5 Leads |
Surface Mount | YES |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2015 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
Terminal Finish | Matte Tin (Sn) |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | FLAT |
Reach Compliance Code | not_compliant |
JESD-30 Code | R-PDSO-F5 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 3.8W Ta 106W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 1.7m Ω @ 50A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 3300pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 35A Ta 185A Tc |
Gate Charge (Qg) (Max) @ Vgs | 47nC @ 10V |
Drain to Source Voltage (Vdss) | 40V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Drain Current-Max (Abs) (ID) | 185A |
Drain-source On Resistance-Max | 0.0017Ohm |
Pulsed Drain Current-Max (IDM) | 900A |
DS Breakdown Voltage-Min | 40V |
Avalanche Energy Rating (Eas) | 338 mJ |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |