Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 23 hours ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN, 5 Leads |
Number of Pins | 5 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2014 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | FLAT |
Peak Reflow Temperature (Cel) | 260 |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | 30 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 3.9W Ta 200W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 3.9W |
Case Connection | DRAIN |
Turn On Delay Time | 32.9 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 1.2m Ω @ 50A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 8900pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 38A Ta |
Gate Charge (Qg) (Max) @ Vgs | 120nC @ 10V |
Rise Time | 79.1ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 81.3 ns |
Turn-Off Delay Time | 60.3 ns |
Continuous Drain Current (ID) | 40A |
Threshold Voltage | 2V |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 276A |
Drain to Source Breakdown Voltage | 60V |
Pulsed Drain Current-Max (IDM) | 900A |
Avalanche Energy Rating (Eas) | 776 mJ |
Max Junction Temperature (Tj) | 175°C |
Height | 1.1mm |
Length | 5.9mm |
Width | 4.9mm |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |