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NTMFS5C604NLT3G

MOSFET N-CH 60V 40A SO-8FL


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NTMFS5C604NLT3G
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 972
  • Description: MOSFET N-CH 60V 40A SO-8FL (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.9W Ta 200W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.2m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 8900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 40A Ta 287A Tc
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 287A
Drain Current-Max (Abs) (ID) 276A
Drain-source On Resistance-Max 0.0017Ohm
Pulsed Drain Current-Max (IDM) 900A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 776 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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