Parameters | |
---|---|
Lifecycle Status | OBSOLETE (Last Updated: 1 day ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2006 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Additional Feature | AVALANCHE RATED |
Subcategory | Other Transistors |
Voltage - Rated DC | -30V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Reach Compliance Code | unknown |
Current Rating | -3.05A |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 8 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 730mW Ta |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2W |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 85m Ω @ 3.05A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 750pF @ 24V |
Current - Continuous Drain (Id) @ 25°C | 2.34A Ta |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
Rise Time | 16ns |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 45 ns |
Turn-Off Delay Time | 45 ns |
Continuous Drain Current (ID) | 3.05A |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 2.34A |
Drain to Source Breakdown Voltage | -30V |
Nominal Vgs | -1.7 V |
Feedback Cap-Max (Crss) | 135 pF |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |