Parameters | |
---|---|
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 8 |
JESD-30 Code | R-PDSO-G8 |
Qualification Status | COMMERCIAL |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 830mW Ta |
Operating Mode | ENHANCEMENT MODE |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 12m Ω @ 10.3A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 950pF @ 24V |
Current - Continuous Drain (Id) @ 25°C | 6.4A Ta |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 4.5V |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Drain Current-Max (Abs) (ID) | 6.4A |
Drain-source On Resistance-Max | 0.012Ohm |
DS Breakdown Voltage-Min | 30V |
RoHS Status | ROHS3 Compliant |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Surface Mount | YES |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
Terminal Finish | MATTE TIN |