Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Surface Mount | YES |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2009 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Pin Count | 8 |
Number of Elements | 1 |
Power Dissipation-Max | 800mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.1W |
Turn On Delay Time | 10.5 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 9m Ω @ 12A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 2201pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 7.5A Ta |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
Rise Time | 3.7ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 9.8 ns |
Turn-Off Delay Time | 29 ns |
Continuous Drain Current (ID) | 9.9A |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 7.5A |
Drain-source On Resistance-Max | 0.009Ohm |
Drain to Source Breakdown Voltage | 30V |
Nominal Vgs | 2.5 V |
Feedback Cap-Max (Crss) | 225 pF |
Height | 1.5mm |
Length | 5mm |
Width | 4mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |