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NTMS4807NR2G

Trans MOSFET N-CH 30V 12.2A 8-Pin SOIC N T/R


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NTMS4807NR2G
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 224
  • Description: Trans MOSFET N-CH 30V 12.2A 8-Pin SOIC N T/R (Kg)

Details

Tags

Parameters
Power Dissipation 1.55W
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.1m Ω @ 14.8A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 24V
Current - Continuous Drain (Id) @ 25°C 9.1A Ta
Gate Charge (Qg) (Max) @ Vgs 24nC @ 4.5V
Rise Time 6.5ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6.5 ns
Turn-Off Delay Time 47 ns
Continuous Drain Current (ID) 12.2A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Height 1.5mm
Length 5mm
Width 4mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 1
Power Dissipation-Max 860mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
See Relate Datesheet

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