Parameters | |
---|---|
Power Dissipation | 1.55W |
Turn On Delay Time | 14 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 6.1m Ω @ 14.8A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 2900pF @ 24V |
Current - Continuous Drain (Id) @ 25°C | 9.1A Ta |
Gate Charge (Qg) (Max) @ Vgs | 24nC @ 4.5V |
Rise Time | 6.5ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 6.5 ns |
Turn-Off Delay Time | 47 ns |
Continuous Drain Current (ID) | 12.2A |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 30V |
Height | 1.5mm |
Length | 5mm |
Width | 4mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
Contact Plating | Tin |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Surface Mount | YES |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2007 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
ECCN Code | EAR99 |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 8 |
Number of Elements | 1 |
Power Dissipation-Max | 860mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |