Parameters | |
---|---|
Lifecycle Status | OBSOLETE (Last Updated: 1 day ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2006 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
Termination | SMD/SMT |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Additional Feature | AVALANCHE RATED |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 20V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Reach Compliance Code | unknown |
Current Rating | 4.2A |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 8 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 770mW Ta |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.5W |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 40m Ω @ 4.2A, 4.5V |
Vgs(th) (Max) @ Id | 1.2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 3.3A Ta |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 4.5V |
Rise Time | 35ns |
Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
Vgs (Max) | ±10V |
Fall Time (Typ) | 50 ns |
Turn-Off Delay Time | 45 ns |
Continuous Drain Current (ID) | 4.2A |
Threshold Voltage | 950mV |
Gate to Source Voltage (Vgs) | 10V |
Drain Current-Max (Abs) (ID) | 3.3A |
Drain-source On Resistance-Max | 0.04Ohm |
Drain to Source Breakdown Voltage | 20V |
Dual Supply Voltage | 20V |
Nominal Vgs | 950 mV |
Feedback Cap-Max (Crss) | 100 pF |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |